The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters

L. J. Borrero-González; L. A.O. Nunes; M. R.B. Andreeta; J. Wojcik; P. Mascher; Y. A. Pusep; D. Comedi; F. E.G. Guimarães

doi:10.1063/1.3457900

The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters

L. J. Borrero-González, L. A.O. Nunes, M. R.B. Andreeta, J. Wojcik, P. Mascher, Y. A. Pusep, D. Comedi, F. E.G. Guimarães

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Resumen

The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Si_y O_1-y, y= (0.36,0.39,0.42), at various annealing temperatures (T_a) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at T_a =900°C and of crystalline Si-ncl for T_a =1000 °C and 1100 °C. For T_a =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower T_a, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.

Idioma original	Inglés
Número de artículo	013105
Publicación	Journal of Applied Physics
Volumen	108
N.º	1
DOI	https://doi.org/10.1063/1.3457900
Estado	Publicada - 1 jul. 2010
Publicado de forma externa	Sí

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abstract = "The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.",

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AU - Borrero-González, L. J.

AU - Nunes, L. A.O.

AU - Andreeta, M. R.B.

AU - Wojcik, J.

AU - Mascher, P.

AU - Pusep, Y. A.

AU - Comedi, D.

AU - Guimarães, F. E.G.

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N2 - The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.

AB - The emission energy dependence of the photoluminescence (PL) decay rate at room temperature has been studied in Si nanoclusters (Si-ncl) embedded in Si oxide matrices obtained by thermal annealing of substoichiometric Si oxide layers Siy O1-y, y= (0.36,0.39,0.42), at various annealing temperatures (Ta) and gas atmospheres. Raman scattering measurements give evidence for the formation of amorphous Si-ncl at Ta =900°C and of crystalline Si-ncl for Ta =1000 °C and 1100 °C. For Ta =1100 °C, the energy dispersion of the PL decay rate does not depend on sample fabrication conditions and follows previously reported behavior. For lower Ta, the rate becomes dependent on fabrication conditions and less energy dispersive. The effects are attributed to exciton localization and decoherence leading to the suppression of quantum confinement and the enhancement of nonradiative recombination in disordered and amorphous Si-ncl.

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The role of quantum confinement and crystalline structure on excitonic lifetimes in silicon nanoclusters

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