Fano resonance in heavily doped porous silicon

Y. A. Pusep; A. D. Rodrigues; L. J. Borrero-González; L. N. Acquaroli; R. Urteaga; R. D. Arce; R. R. Koropecki; M. Tirado; D. Comedi

doi:10.1002/jrs.2870

Fano resonance in heavily doped porous silicon

Y. A. Pusep, A. D. Rodrigues, L. J. Borrero-González, L. N. Acquaroli, R. Urteaga, R. D. Arce, R. R. Koropecki, M. Tirado, D. Comedi

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

5 Citas (Scopus)

Resumen

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO₂ interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.

Idioma original	Inglés
Páginas (desde-hasta)	1405-1407
Número de páginas	3
Publicación	Journal of Raman Spectroscopy
Volumen	42
N.º	6
DOI	https://doi.org/10.1002/jrs.2870
Estado	Publicada - jun. 2011
Publicado de forma externa	Sí

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10.1002/jrs.2870

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title = "Fano resonance in heavily doped porous silicon",

abstract = "Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.",

keywords = "porous silicon, Raman spectroscopy",

author = "Pusep, {Y. A.} and Rodrigues, {A. D.} and Borrero-Gonz{\'a}lez, {L. J.} and Acquaroli, {L. N.} and R. Urteaga and Arce, {R. D.} and Koropecki, {R. R.} and M. Tirado and D. Comedi",

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month = jun,

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AU - Pusep, Y. A.

AU - Rodrigues, A. D.

AU - Borrero-González, L. J.

AU - Acquaroli, L. N.

AU - Urteaga, R.

AU - Arce, R. D.

AU - Koropecki, R. R.

AU - Tirado, M.

AU - Comedi, D.

PY - 2011/6

Y1 - 2011/6

N2 - Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.

AB - Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.

KW - porous silicon

KW - Raman spectroscopy

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DO - 10.1002/jrs.2870

M3 - Article

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