Fano resonance in heavily doped porous silicon

Y. A. Pusep; A. D. Rodrigues; L. J. Borrero-González; L. N. Acquaroli; R. Urteaga; R. D. Arce; R. R. Koropecki; M. Tirado; D. Comedi

doi:10.1002/jrs.2870

Fano resonance in heavily doped porous silicon

Y. A. Pusep
, A. D. Rodrigues
, L. J. Borrero-González
, L. N. Acquaroli
, R. Urteaga
, R. D. Arce
, R. R. Koropecki
, M. Tirado
, D. Comedi

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO₂ interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.

Original language	English
Pages (from-to)	1405-1407
Number of pages	3
Journal	Journal of Raman Spectroscopy
Volume	42
Issue number	6
DOIs	https://doi.org/10.1002/jrs.2870
State	Published - Jun 2011
Externally published	Yes

Keywords

Raman spectroscopy
porous silicon

Access to Document

10.1002/jrs.2870

Cite this

@article{de45d490e7344696a98b56b611e3c188,

title = "Fano resonance in heavily doped porous silicon",

abstract = "Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.",

keywords = "Raman spectroscopy, porous silicon",

author = "Pusep, \{Y. A.\} and Rodrigues, \{A. D.\} and Borrero-Gonz{\'a}lez, \{L. J.\} and Acquaroli, \{L. N.\} and R. Urteaga and Arce, \{R. D.\} and Koropecki, \{R. R.\} and M. Tirado and D. Comedi",

year = "2011",

month = jun,

doi = "10.1002/jrs.2870",

language = "English",

volume = "42",

pages = "1405--1407",

journal = "Journal of Raman Spectroscopy",

issn = "0377-0486",

publisher = "John Wiley and Sons Ltd",

number = "6",

}

TY - JOUR

T1 - Fano resonance in heavily doped porous silicon

AU - Pusep, Y. A.

AU - Rodrigues, A. D.

AU - Borrero-González, L. J.

AU - Acquaroli, L. N.

AU - Urteaga, R.

AU - Arce, R. D.

AU - Koropecki, R. R.

AU - Tirado, M.

AU - Comedi, D.

PY - 2011/6

Y1 - 2011/6

N2 - Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.

AB - Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si-SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.

KW - Raman spectroscopy

KW - porous silicon

UR - https://www.scopus.com/pages/publications/79959445378

U2 - 10.1002/jrs.2870

DO - 10.1002/jrs.2870

M3 - Article

AN - SCOPUS:79959445378

SN - 0377-0486

VL - 42

SP - 1405

EP - 1407

JO - Journal of Raman Spectroscopy

JF - Journal of Raman Spectroscopy

IS - 6

ER -

Fano resonance in heavily doped porous silicon

Abstract

Keywords

Access to Document

Other files and links

Cite this